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TS2012EIJT 数据表(PDF) 7 Page - STMicroelectronics |
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TS2012EIJT 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 31 page  TS2012FC Electrical characteristics 7/31 3 Electrical characteristics 3.1 Electrical characteristics tables Table 5. VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25°C (unless otherwise specified) Symbol Parameters and test conditions Min. Typ. Max. Unit ICC Supply current No input signal, no load, both channels 57 mA ISTBY Standby current No input signal, VSTBY = GND 12 µA Voo Output offset voltage Floating inputs, G = 6dB, RL = 8Ω 25 mV Po Output power THD + N = 1% max, f = 1kHz, RL = 4Ω THD + N = 1% max, f = 1kHz, RL = 8Ω THD + N = 10% max, f = 1kHz, RL = 4Ω THD + N = 10% max, f = 1kHz, RL = 8Ω 1.85 1.15 2.5 1.6 W THD + N Total harmonic distortion + noise Po = 0.8W, G = 6dB, f =1kHz, RL = 8Ω 0.5 % Efficiency Efficiency per channel Po = 1.85W, RL = 4Ω +15µH Po = 1.16 W, RL = 8Ω+15µH 78 88 % PSRR Power supply rejection ratio with inputs grounded Cin=1µF (1),f = 217Hz, R L = 8Ω, Gain=6dB, Vripple = 200mVpp 65 dB Crosstalk Channel separation Po = 0.9W, G = 6dB, f =1kHz, RL = 8Ω 90 dB CMRR Common mode rejection ratio Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB, ΔVICM = 200mVpp 63 dB Gain Gain value with no load G1 = G0 = VIL G1 = VIL & G0 = VIH G1 = VIH & G0 = VIL G1 = G0 = VIH 5.5 11.5 17.5 23.5 6 12 18 24 6.5 12.5 18.5 24.5 dB Zin Single-ended input impedance Referred to ground Gain = 6dB Gain = 12dB Gain = 18dB Gain = 24dB 24 24 12 6 30 30 15 7.5 36 36 18 9 k Ω FPWM Pulse width modulator base frequency 190 280 370 kHz SNR Signal to noise ratio (A-weighting) Po = 1.1W, G = 6dB, RL = 8Ω 99 dB |
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类似说明 - TS2012EIJT |
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