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ADVANCED DATA

June 2003

STP22NM60 - STF22NM60

STB22NM60 - STB22NM60-1 - STW22NM60

N-CHANNEL 600V - 0.19

MDmesh™Power MOSFET

1

2

3

1

3

1

2

3

TO-220FP

1

2

3

1

2

3

TO-220

TO-247

s

s

HIGH dv/dt AND AVALANCHE CAPABILITIES

s

100% AVALANCHE TESTED

s

LOW INPUT CAPACITANCE AND GATE CHARGE

s

LOW GATE INPUT RESISTANCE

DESCRIPTION

This improved version of MDmesh™ which is based

on Multiple Drain process represents the new bench-

mark in high voltage MOSFETs. The resulting product

exhibits even lower on-resistance, impressively high

dv/dt and excellent avalanche characteristics. The

adoption of the Company’s proprietary strip technique

yields overall performances that are significantly better

than that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing sys-

tem miniaturization and higher efficiencies.

ORDERING INFORMATION

TYPE

STP22NM60

STF22NM60

STB22NM60

STB22NM60-1

STW22NM60

600 V

600 V

600 V

600 V

600 V

< 0.25

Ω

< 0.25

Ω

< 0.25

Ω

< 0.25

Ω

< 0.25

Ω

7.6

Ω*nC

7.6

Ω*nC

7.6

Ω*nC

7.6

Ω*nC

7.6

Ω*nC

22 A

22 A

22 A

22 A

22 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP22NM60

P22NM60

TO-220

TUBE

STF22NM60

F22NM60

TO-220FP

TUBE

STB22NM60

B22NM60T4

D

TAPE & REEL

STB22NM60-1

B22NM60-1

I

TUBE

STW22NM60

W22NM60

TO-247

TUBE

INTERNAL SCHEMATIC DIAGRAM