STP20N06FI datasheet(2/10 Pages) STMICROELECTRONICS

部件名	STP20N06FI

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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THERMAL DATA

TO-220

ISOWATT220

Rthj-case

Thermal Resist ance Junct ion-case

Max

1.88

4. 29

oC/W

Rthj-amb

Rthc- sink

Tl

Thermal Resist ance Junct ion-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Uni t

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

20

A

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =25 V)

80

mJ

EAR

Repet itive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

20

mJ

IAR

Avalanche Current, Repetitive or Not-Repetitive

(T c = 100

oC, pulse width limited by Tj max,

δ <1%)

14

A

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

60

V

IDS S

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

oC

1

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =250

µA2

2.9

4

V

RDS(on)

St atic Drain-source On

Resist ance

VGS =10V

ID = 10 A

0.06

0.085

Ω

ID(on)

On St ate Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

20

A

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on)max

ID =10 A

6

9

S

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS =0

520

250

80

700

350

120

pF

STP20N06/FI

2/10

类似零件编号 - STP20N06FI

制造商	部件名	数据表	功能描述
STMicroelectronics	STP20N10	140Kb / 9P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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VBsemi Electronics Co.,...	STP20N10L	939Kb / 7P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STP20N10LFI	203Kb / 10P	N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

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类似说明 - STP20N06FI

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More results

STP20N06FI 数据表(PDF) 2 Page - STMicroelectronics

STP20N06FI 数据表(HTML) 2 Page - STMicroelectronics

类似零件编号 - STP20N06FI

类似说明 - STP20N06FI

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STP20N06FI 数据表(PDF) 2 Page - STMicroelectronics

STP20N06FI 数据表(HTML) 2 Page - STMicroelectronics

类似零件编号 - STP20N06FI

类似说明 - STP20N06FI

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数据表 下载

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