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STP19NB20 数据表(PDF) 3 Page - STMicroelectronics |
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STP19NB20 数据表(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP19NB20/FP/STB19NB20-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 100V, ID = 9.5 A RG =4.7Ω VGS = 10V (see test circuit, Figure 3) 15 ns tr Rise Time 15 ns Qg Total Gate Charge VDD = 160V, ID = 19 A, VGS = 10V 29 40 nC Qgs Gate-Source Charge 9.5 nC Qgd Gate-Drain Charge 13 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 160V, ID = 19 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 10 ns tf Fall Time 10 ns tc Cross-over Time 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 19 A ISDM (2) Source-drain Current (pulsed) 76 A VSD (1) Forward On Voltage ISD = 19 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 19 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 210 ns Qrr Reverse Recovery Charge 1.5 µC IRRM Reverse Recovery Current 14.5 A Safe Operating Area for TO-220FP Safe Operating Area for TO-220/I2PAK |
类似零件编号 - STP19NB20 |
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类似说明 - STP19NB20 |
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