数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

PC48F4400P0Y00 数据表(PDF) 20 Page - Numonyx B.V

部件名 PC48F4400P0Y00
功能描述  Numonyx Wireless Flash Memory (W18)
Download  102 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NUMONYX [Numonyx B.V]
网页  http://www.numonyx.com
标志 NUMONYX - Numonyx B.V

PC48F4400P0Y00 数据表(HTML) 20 Page - Numonyx B.V

Back Button PC48F4400P0Y00 Datasheet HTML 16Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 17Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 18Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 19Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 20Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 21Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 22Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 23Page - Numonyx B.V PC48F4400P0Y00 Datasheet HTML 24Page - Numonyx B.V Next Button
Zoom Inzoom in Zoom Outzoom out
 20 / 102 page
background image
Numonyx™ Wireless Flash Memory (W18)
Datasheet
November 2007
20
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
WAIT
Output
WAIT: Output signal.
Indicates invalid data during synchronous array or non-array flash reads. Read Configuration Register
bit 10 (RCR[10]) determines WAIT-asserted polarity (high or low). WAIT is High-Z if F-CE# is
deasserted; WAIT is not gated by F-OE#.
• In synchronous array or non-array flash read modes, WAIT indicates invalid data when asserted
and valid data when deasserted.
• In asynchronous flash page read, and all flash write modes, WAIT is asserted.
F-WP#
Input
FLASH WRITE PROTECT: Low-true input.
F-WP# enables/disables the lock-down protection mechanism of the selected flash die.
• F-WP# low enables the lock-down mechanism where locked down blocks cannot be unlocked with
software commands.
• F-WP# high disables the lock-down mechanism, allowing locked down blocks to be unlocked with
software commands.
ADV#
Input
ADDRESS VALID: Low-true input.
During synchronous flash read operations, addresses are latched on the rising edge of ADV#, or on
the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous flash read operations, addresses are latched on the rising edge of ADV#, or are
continuously flow-through when ADV# is kept asserted.
R-UB#
R-LB#
Input
RAM UPPER / LOWER BYTE ENABLES: Low-true input.
During RAM read and write cycles, R-UB# low enables the RAM high order bytes on D[15:8], and R-
LB# low enables the RAM low-order bytes on D[7:0].
R-UB# and R-LB# are available on stacked combinations with PSRAM or SRAM die and are RFU on
flash-only stacked combinations.
F-RST#
Input
FLASH RESET: Low-true input.
F-RST# low initializes flash internal circuitry and disables flash operations. F-RST# high enables flash
operation. Exit from reset places the flash in asynchronous read array mode.
P-Mode,
P-CRE
Input
P-Mode (PSRAM Mode): Low-true input.
P-Mode is used to program the Configuration Register, and enter/exit Low Power Mode of PSRAM die.
P-Mode is available on stacked combinations with asynchronous-only PSRAM die.
P-CRE (PSRAM Configuration Register Enable): High-true input.
P-CRE is high, write operations load the refresh control register or bus control register.
P-CRE is applicable only on combinations with synchronous PSRAM die.
P-Mode, P-CRE is an RFU on stacked combinations without PSRAM die.
F-VPP,
F-VPEN
Power
FLASH PROGRAM AND ERASE POWER: Valid F-VPP voltage on this ball enables flash program/erase
operations.
Flash memory array contents cannot be altered when F-VPP(F-VPEN) < VPPLK (VPENLK). Erase / program
operations at invalid F-VPP (F-VPEN) voltages should not be attempted. Refer to flash discrete product
datasheet for additional details.
F-VPEN (Erase/Program/Block Lock Enables) is not available for L18/L30 SCSP products.
F[2:1]-VCC
Power
FLASH LOGIC POWER: F1-VCC supplies power to the core logic of flash die #1; F2-VCC supplies
power to the core logic of flash die #2 and flash die #3. Write operations are inhibited when F-VCC <
VLKO. Device operations at invalid F-VCC voltages should not be attempted.
F2-VCC is available on stacked combinations with two or three flash dies, and is an RFU on stacked
combinations with only one flash die.
S-VCC
Power
SRAM POWER SUPPLY: Supplies power for SRAM operations.
S-VCC is available on stacked combinations with SRAM die, and is RFU on stacked combinations
without SRAM die.
P-VCC
Power
PSRAM POWER SUPPLY: Supplies power for PSRAM operations.
P-VCC is available on stacked combinations with PSRAM die, and is RFU on stacked combinations
without PSRAM die.
VCCQ
Power
DEVICE I/O POWER: Supply power for the device input and output buffers.
VSS
Power
DEVICE GROUND: Connect to system ground. Do not float any VSS connection.
RFU
RESERVED for FUTURE USE: Reserved for future device functionality/ enhancements. Contact
Numonyx regarding the use of balls designated RFU.
DU
DO NOT USE: Do not connect to any other signal, or power supply; must be left floating.
Table 8:
Signal Descriptions - QUAD+ Package (Sheet 2 of 2)


类似零件编号 - PC48F4400P0Y00

制造商部件名数据表功能描述
logo
Numonyx B.V
PC48F4400P0T1B0 NUMONYX-PC48F4400P0T1B0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
PC48F4400P0T1U0 NUMONYX-PC48F4400P0T1U0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
PC48F4400P0T1V0 NUMONYX-PC48F4400P0T1V0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
PC48F4400P0TBB0 NUMONYX-PC48F4400P0TBB0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
PC48F4400P0TBU0 NUMONYX-PC48F4400P0TBU0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
More results

类似说明 - PC48F4400P0Y00

制造商部件名数据表功能描述
logo
Numonyx B.V
313272-06 NUMONYX-313272-06 Datasheet
1Mb / 90P
   Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
28F640W30 NUMONYX-28F640W30 Datasheet
1Mb / 102P
   Numonyx Wireless Flash Memory (W30)
251407-13 NUMONYX-251407-13 Datasheet
652Kb / 46P
   Wireless Flash Memory (W18/W30 SCSP)
313295-04 NUMONYX-313295-04 Datasheet
1Mb / 98P
   Numonyx StrataFlash Wireless Memory
logo
Micron Technology
JS28F128P30TF75A MICRON-JS28F128P30TF75A Datasheet
1Mb / 90P
   Numonyx Axcell P30-65nm Flash Memory
JS28F512P30TFA MICRON-JS28F512P30TFA Datasheet
11Mb / 86P
   Numonyx Axcell P30-65nm Flash Memory
logo
Intel Corporation
TE28F640J3D75 INTEL-TE28F640J3D75 Datasheet
916Kb / 68P
   Numonyx??Embedded Flash Memory (J3 v. D)
logo
Numonyx B.V
TE28F320J3D-75 NUMONYX-TE28F320J3D-75 Datasheet
911Kb / 68P
   Numonyx??Embedded Flash Memory (J3 v. D)
logo
Intel Corporation
28F128W18 INTEL-28F128W18 Datasheet
1Mb / 100P
   Intel짰 Wireless Flash Memory
logo
Micron Technology
JS28F256P30B95A MICRON-JS28F256P30B95A Datasheet
1Mb / 97P
   Numonyx StrataFlash Embedded Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com