数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

PF38F5070M0T0B 数据表(PDF) 9 Page - Numonyx B.V

部件名 PF38F5070M0T0B
功能描述  Numonyx Wireless Flash Memory (W18)
Download  102 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NUMONYX [Numonyx B.V]
网页  http://www.numonyx.com
标志 NUMONYX - Numonyx B.V

PF38F5070M0T0B 数据表(HTML) 9 Page - Numonyx B.V

Back Button PF38F5070M0T0B Datasheet HTML 5Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 6Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 7Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 8Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 9Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 10Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 11Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 12Page - Numonyx B.V PF38F5070M0T0B Datasheet HTML 13Page - Numonyx B.V Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 102 page
background image
November 2007
Datasheet
Order Number: 290701-18
9
Numonyx™ Wireless Flash Memory (W18)
2.0
Functional Overview
This section provides an overview of the W18 device features and architecture.
The W18 device provides Read-While-Write (RWW) and Read-White-Erase (RWE)
capability with high-performance synchronous and asynchronous reads on package-
compatible densities with a 16-bit data bus. Individually-erasable memory blocks are
optimally sized for code and data storage. Eight 4-Kword parameter blocks are located
in the parameter partition at either the top or bottom of the memory map. The rest of
the memory array is grouped into 32-Kword main blocks.
The memory architecture for the W18 device consists of multiple 4-Mbit partitions, the
exact number depending on device density. By dividing the memory array into
partitions, program or erase operations can take place simultaneously during read
operations. Burst reads can traverse partition boundaries, but user application code is
responsible for ensuring that they don’t extend into a partition that is actively
programming or erasing. Although each partition has burst-read, write, and erase
capabilities, simultaneous operation is limited to write or erase in one partition while
other partitions are in a read mode.
Augmented erase-suspend functionality further enhances the RWW capabilities of this
device. An erase can be suspended to perform a program or read operation within any
block, except that which is erase-suspended. A program operation nested within a
suspended erase can subsequently be suspended to read yet another memory location.
After device power-up or reset, the W18 device defaults to asynchronous page-mode
read configuration. Writing to the device’s Read Configuration Register (RCR) enables
synchronous burst-mode read operation. In synchronous mode, the CLK input
increments an internal burst address generator. CLK also synchronizes the flash
memory with the host CPU and outputs data on every, or on every other, valid CLK
cycle after an initial latency. A programmable WAIT output signals to the CPU when
data from the flash memory device is ready.
In addition to its improved architecture and interface, the W18 device incorporates
Enhanced Factory Programming (EFP), a feature that enables fast programming and
low-power designs. The EFP feature provides the fastest currently-available program
performance, which can increase a factory’s manufacturing throughput.
The device supports read operations at 1.8 V and erase and program operations at 1.8
V or 12 V. With the 1.8 V option, VCC and VPP can be tied together for a simple, ultra-
low-power design. In addition to voltage flexibility, the dedicated VPP input provides
complete data protection when VPP ≤ VPPLK.
This device (130 nm) allows I/O operation at voltages lower than the minimum VCCQ of
1.7 V. This Extended VCCQ range, 1.35 V – 1.8 V, permits even greater system design
flexibility.
A 128-bit protection register enhances the user’s ability to implement new security
techniques and data protection schemes. Unique flash device identification and fraud-,
cloning-, or content- protection schemes are possible through a combination of factory-
programmed and user-OTP data cells. Zero-latency locking/unlocking on any memory
block provides instant and complete protection for critical system code and data. An
additional block lock-down capability provides hardware protection where software
commands alone cannot change the block’s protection status.
The Command User Interface (CUI) is the system processor’s link to internal flash
memory operation. A valid command sequence written to the CUI initiates device Write
State Machine (WSM) operation that automatically executes the algorithms, timings,


类似零件编号 - PF38F5070M0T0B

制造商部件名数据表功能描述
logo
Numonyx B.V
PF38F5070M0T0B0 NUMONYX-PF38F5070M0T0B0 Datasheet
2Mb / 139P
   StrataFlash짰 Cellular Memory
More results

类似说明 - PF38F5070M0T0B

制造商部件名数据表功能描述
logo
Numonyx B.V
313272-06 NUMONYX-313272-06 Datasheet
1Mb / 90P
   Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
28F640W30 NUMONYX-28F640W30 Datasheet
1Mb / 102P
   Numonyx Wireless Flash Memory (W30)
251407-13 NUMONYX-251407-13 Datasheet
652Kb / 46P
   Wireless Flash Memory (W18/W30 SCSP)
313295-04 NUMONYX-313295-04 Datasheet
1Mb / 98P
   Numonyx StrataFlash Wireless Memory
logo
Micron Technology
JS28F128P30TF75A MICRON-JS28F128P30TF75A Datasheet
1Mb / 90P
   Numonyx Axcell P30-65nm Flash Memory
JS28F512P30TFA MICRON-JS28F512P30TFA Datasheet
11Mb / 86P
   Numonyx Axcell P30-65nm Flash Memory
logo
Intel Corporation
TE28F640J3D75 INTEL-TE28F640J3D75 Datasheet
916Kb / 68P
   Numonyx??Embedded Flash Memory (J3 v. D)
logo
Numonyx B.V
TE28F320J3D-75 NUMONYX-TE28F320J3D-75 Datasheet
911Kb / 68P
   Numonyx??Embedded Flash Memory (J3 v. D)
logo
Intel Corporation
28F128W18 INTEL-28F128W18 Datasheet
1Mb / 100P
   Intel짰 Wireless Flash Memory
logo
Micron Technology
JS28F256P30B95A MICRON-JS28F256P30B95A Datasheet
1Mb / 97P
   Numonyx StrataFlash Embedded Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com