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PF38F5070MCY0B 数据表(PDF) 25 Page - Numonyx B.V |
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PF38F5070MCY0B 数据表(HTML) 25 Page - Numonyx B.V |
25 / 102 page November 2007 Datasheet Order Number: 290701-18 25 Numonyx™ Wireless Flash Memory (W18) VOH Output High VCCQ – 0.1 - VCCQ – 0.1 - V VCC = VCCMin VCCQ = VCCQMin IOH = –100 µA VPPLK VPP Lock-Out - 0.4 - 0.4 V 3 VLKO VCC Lock (130nm) 1.0 - 1.0 - V 4 VCC Lock (90nm) 0.7 - - - V VILKOQ VCCQ Lock 0.9 - 0.9 - V Notes: 1. VCCQ = 1.35 V - 1.8V is available on 130 nm devices only. 2. VIL can undershoot to –1.0 V for durations of 2 ns or less and VIH can overshoot to VCCQ+1.0 V for durations of 2 ns or less. 3. VPP <= VPPLK inhibits erase and program operations. Don’t use VPPL and VPPH outside their valid ranges. 4. Block erases, programming and lock-bit configurations are inhibited when VCC<VLKO, and not guaranteed in the range between VLKOMIN and VCCMIN, and above VCCMAX. Table 12: DC Voltage Characteristics (Sheet 2 of 2) Symbol Parameter VCCQ= 1.8 V Unit Test Condition Notes 32/64-Mbit 128-Mbit Min Max Min Max |
类似零件编号 - PF38F5070MCY0B |
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类似说明 - PF38F5070MCY0B |
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