STGP7NB60HDFP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STGP7NB60HDFP

功能描述	N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STGP7NB60HD

STGP7NB60HDFP

N-CHANNEL 7A - 600V TO-220/FP

PowerMESH

™ IGBT

s

HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s

LOW ON-VOLTAGE DROP (Vcesat)

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

VERY HIGH FREQUENCY OPERATION

s

OFF LOSSES INCLUDE TAIL CURRENT

s

CO-PACKAGED WITH TURBOSWITCH

™

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH

™

IGBTs,

with

outstanding

perfomances. The suffix ”H” identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

APPLICATIONS

s

HIGH FREQUENCY MOTOR CONTROLS

s

SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

VCES

VCE(sat)

IC

STGP7NB60HD

STGP7NB60HDFP

600 V

<2. 8 V

7A

June 1999

1

2

3

TO-220

TO-220FP

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STGP7NB60HD

ST GP7NB60HDFP

VCES

Collector-Emitter Voltage (VGS = 0)

600

V

VGE

G ate-Emitter Voltage

± 20

V

IC

Collector Current (continuous) at Tc = 25

oC14

13

A

IC

Collector Current (continuous) at Tc = 100

oC7

6

A

ICM(

•)

Collector Current (pulsed)

56

A

Ptot

T otal Dissipation at T c = 25

oC80

35

W

Derating Factor

0.64

0.28

W /

oC

Tstg

Storage T emperature

-65 t o 150

oC

Tj

Max. O perat ing Junct ion T emperature

150

oC

(

•) Pulse width limited by safe operating area

1/9

类似零件编号 - STGP7NB60HDFP

制造商	部件名	数据表	功能描述
STMicroelectronics	STGP7NB60H	86Kb / 8P	N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT

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类似说明 - STGP7NB60HDFP

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