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STD4NB40-1 数据表(PDF) 3 Page - STMicroelectronics |
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STD4NB40-1 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STD4NB40/STD4NB40-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 200 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 11 ns tr Rise Time 8 ns Qg Total Gate Charge VDD = 320V, ID = 5 A, VGS = 10V 14.5 20 nC Qgs Gate-Source Charge 7 nC Qgd Gate-Drain Charge 5.1 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-Voltage Rise Time Fall Time Cross-over Time VDD = 320V, ID = 5 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 9 6 14 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 5 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 300 ns Qrr Reverse Recovery Charge 1.6 µC IRRM Reverse Recovery Current 10.5 A Thermal Impedance Safe Operating Area |
类似零件编号 - STD4NB40-1 |
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类似说明 - STD4NB40-1 |
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