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STD110NH02L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STD110NH02L
功能描述  N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET??III POWER MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD110NH02L 数据表(HTML) 3 Page - STMicroelectronics

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STD110NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) Garanted when external Rg=4.7
Ω and tf < tfmax.
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Value limited by wire bonding
(6) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A
(3) Pulse width limited by safe operating area.
(7) Gate charge for synchronous operation
(4) Starting Tj = 25 oC, ID = 40A, VDD = 10V
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
14
224
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 10 V ID= 80 A VGS= 10 V
69
13
9
93
nC
nC
nC
Qoss(6)
Output Charge
VDS= 16 V
VGS= 0 V
27
nC
Qgls(7)
Third-quadrant Gate Charge
VDS< 0 V
VGS= 10 V
64
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 10 V
ID = 40 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
69
40
54
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
VSD (*)
Forward On Voltage
ISD = 40 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
47
58
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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