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STB6NB90 数据表(PDF) 1 Page - STMicroelectronics |
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STB6NB90 数据表(HTML) 1 Page - STMicroelectronics |
1 / 5 page STB6NB90 N - CHANNEL 900V - 1.7 Ω - 5.8A - D2PAK PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 1.7 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL (500 UNITS) DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM February 1999 D 2PAK TO-263 TYPE VDSS RDS(on) ID STB6NB90 900 V < 2.0 Ω 5.8 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 900 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 5.8 A ID Drain Current (continuous) at Tc = 100 oC 3.6 A IDM( •) Drain Current (pulsed) 23 A Ptot Total Dissipation at Tc = 25 o C 135 W Derating Factor 1.08 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Limited only by maximum temperature allowed (1) ISD ≤ 6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 |
类似零件编号 - STB6NB90 |
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类似说明 - STB6NB90 |
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