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RT6N430C 数据表(PDF) 2 Page - Isahaya Electronics Corporation |
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RT6N430C 数据表(HTML) 2 Page - Isahaya Electronics Corporation |
2 / 3 page 〈SMALL-SIGNAL TRANSISITOR〉 RT6N430C TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE ELECTRICAL CHARACTERISTICS(Ta=25℃) Limits Parameter Symbol Test conditions Min Typ Max Unit C to B break down voltage V(BR)CBO I C=50μA,I E=0mA 40 - - V E to B break down voltage V(BR)EBO I C=50μA,I C=0mA 40 V C to E break down voltage V(BR)CEO I C=1mA,R BE=∞ 20 V Collector cut off current ICBO V CB=40V, I E=0mA - - 0.5 μA Emitter cut off current IEBO V EB=40V, I C=0mA - - 0.5 μA DC forward current gain hFE V CE=5V ,I C=50mA 820 - 2500 - C to E saturation voltage VCE(sat) I C=50mA ,I B=2.5mA - 40 150 mV Input resistor R1 - 3.29 4.7 6.11 kΩ Gain band width product fT V CE=10V, I E=-50mA, f=100MHz - 120 - MHz Output “ON” resistance Ron V I=5V, R L=1kΩ, f=1MHz - 0.55 - Ω ISAHAYA ELECTRONICS CORPORATION |
类似零件编号 - RT6N430C |
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类似说明 - RT6N430C |
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