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BTA08-600B 数据表(PDF) 2 Page - SemiWell Semiconductor |
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BTA08-600B 数据表(HTML) 2 Page - SemiWell Semiconductor |
2 / 6 page Electrical Characteristics Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 2.0 mA VTM Peak On-State Voltage IT = 12 A, Inst. Measurement ─ ─ 1.4 V I+GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 30 mA I -GT1 Ⅱ ── 30 I -GT3 Ⅲ ── 30 V+GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 V V-GT1 Ⅱ ── 1.5 V-GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM 10 ── V/㎲ IH Holding Current ─ 15 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 3.7 °C/W BTA08-600B 2/6 |
类似零件编号 - BTA08-600B |
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类似说明 - BTA08-600B |
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