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BTA08-600B 数据表(PDF) 2 Page - SemiWell Semiconductor

部件名 BTA08-600B
功能描述  Bi-Directional Triode Thyristor
Download  6 Pages
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制造商  SEMIWELL [SemiWell Semiconductor]
网页  http://www.semiwellsemi.co.kr
标志 SEMIWELL - SemiWell Semiconductor

BTA08-600B 数据表(HTML) 2 Page - SemiWell Semiconductor

  BTA08-600B Datasheet HTML 1Page - SemiWell Semiconductor BTA08-600B Datasheet HTML 2Page - SemiWell Semiconductor BTA08-600B Datasheet HTML 3Page - SemiWell Semiconductor BTA08-600B Datasheet HTML 4Page - SemiWell Semiconductor BTA08-600B Datasheet HTML 5Page - SemiWell Semiconductor BTA08-600B Datasheet HTML 6Page - SemiWell Semiconductor  
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Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
──
2.0
mA
VTM
Peak On-State Voltage
IT = 12 A, Inst. Measurement
1.4
V
I+GT1
Gate Trigger Current
VD = 6 V, RL=10 Ω
──
30
mA
I -GT1
──
30
I -GT3
──
30
V+GT1
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
──
1.5
V
V-GT1
──
1.5
V-GT3
──
1.5
VGD
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
──
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM
10
──
V/㎲
IH
Holding Current
15
mA
Rth(j-c)
Thermal Impedance
Junction to case
──
3.7
°C/W
BTA08-600B
2/6


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