STB100NF04L datasheet(3/9 Pages) STMICROELECTRONICS

部件名	STB100NF04L

功能描述	N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET??II POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB100NF04L

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 20 V

ID = 50 A

RG = 4.7 Ω

VGS = 4.5 V

(Resistive Load, Figure 3)

37

270

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD= 32V ID= 100A VGS= 4.5V

72

20

28.5

90

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 20 V

D = 50 A

RG = 4.7Ω,

VGS = 4.5 V

(Resistive Load, Figure 3)

90

80

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 32 V

ID = 100 A

RG = 4.7Ω,

VGS = 4.5 V

(Inductive Load, Figure 5)

85

125

160

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

100

400

A

VSD (*)

Forward On Voltage

ISD = 100A

VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 100 A

di/dt = 100A/µs

VDD = 20 V

Tj = 150°C

(see test circuit, Figure 5)

88

240

5.5

ns

nC

A

ELECTRICAL CHARACTERISTICS (continued)

Thermal Impedance

Safe Operating Area

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