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STB75NF75L 数据表(PDF) 4 Page - STMicroelectronics |
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STB75NF75L 数据表(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STB75NF75L 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 75 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±15V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 37.5A VGS= 5V, ID= 37.5A 0.009 0.010 0.011 0.013 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15V, ID = 37.5A 120 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 4300 660 205 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60V, ID = 75A VGS = 5V see Figure 15 75 18 31 90 nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 40V, ID = 37.5A, RG = 4.7Ω, VGS = 4.5V see Figure 14 35 155 110 60 ns ns ns ns |
类似零件编号 - STB75NF75L |
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类似说明 - STB75NF75L |
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