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L6384ED013TR 数据表(PDF) 9 Page - STMicroelectronics |
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L6384ED013TR 数据表(HTML) 9 Page - STMicroelectronics |
9 / 17 page L6384E Bootstrap driver 9/17 For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 4. Bootstrap driver V drop 30nC 5 µs --------------- 125 Ω 0.8V ∼ ⋅ = TO LOAD D99IN1067 H.V. HVG ab LVG HVG LVG CBOOT TO LOAD H.V. CBOOT DBOOT VBOOT VS VS VOUT VBOOT VOUT |
类似零件编号 - L6384ED013TR |
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类似说明 - L6384ED013TR |
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