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CHA5052 数据表(PDF) 8 Page - United Monolithic Semiconductors |
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CHA5052 数据表(HTML) 8 Page - United Monolithic Semiconductors |
8 / 10 page CHA5052 7-16GHz High Power Amplifier Ref. : DSCHA50527092 - 02 Apr 07 8/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Assembly recommandations Note : Supply feed might be capacitively bypassed. 25 µm diameter gold wire is to be prefered. DC Pads Size : 100/100 µm RF Pads Size : 125/200 µm RF bounding wire length: 400µm Chip thickness : 100 µm. 10nF 10nF 120pF 120pF 120pF 120pF 120pF 10nF 10nF 10nF To Vg1,2 DC Gate supply To Vg3 DC Gate supply To Vd3 DC Drain supply To Vd1,2 DC Drain supply To Vd3 DC Drain supply |
类似零件编号 - CHA5052 |
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类似说明 - CHA5052 |
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