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STB200N4F3 数据表(PDF) 5 Page - STMicroelectronics

部件名 STB200N4F3
功能描述  N-channel 40V - 0.0035廓 - 120A - D2PAK - TO-220 planar STripFET??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB200N4F3 数据表(HTML) 5 Page - STMicroelectronics

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STB200N4F3 - STP200N4F3
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20 V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 13)
19
180
ns
ns
td(off)
tf
Off-voltage rise time
Fall time
VDD=20 V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 13)
90
65
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
120
480
A
A
VSD
Forward on voltage
ISD=120A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, di/dt = 100A/µs,
VDD=20 V, Tj=150°C
(see Figure 18)
67
130
4
ns
nC
A


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