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STP200N4F3 数据表(PDF) 4 Page - STMicroelectronics |
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STP200N4F3 数据表(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STB200N4F3 - STP200N4F3 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 4 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 80A D²PAK TO-220 0.0035 0.0040 0.0040 0.0044 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =10V, ID = 80A 200 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 5100 1270 37 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 120A VGS =10V (see Figure 14) 75 23 17 nC nC nC |
类似零件编号 - STP200N4F3 |
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类似说明 - STP200N4F3 |
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