PD55015-PD55015S Datasheet(数据表) 1 Page

部件型号	PD55015-PD55015S

说明	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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PRELIMINARY DATA

May 2000

PD55015 - PD55015S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 15 W with 13.5 dB gain @ 500 MHz /

12.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55015 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 12V in common source mode at frequencies of

up to 1GHz. PD55015 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD55015’s su-

perior linearity performance makes it an ideal so-

lution for car mobile radio.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

XPD55015

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD55015

PD55015S

XPD55015S

ABSOLUTE MAXIMUM RATINGS(TCASE =25 OC)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain Source Voltage

VGS

Gate-Source Voltage

±20

Drain Current

PDISS

Power Dissipation (@ Tc = 70 0C)

Max. Operating Junction Temperature

165

TSTG

Storage Temperature

-65 to 165

THERMAL DATA

Rth(j-c)

Junction-Case Thermal Resistance

1.3

0C/W

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