MJE803 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	MJE803

功能描述	SILICON NPN POWER DARLINGTON TRANSISTORS

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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MJE802

MJE803

SILICON NPN POWER DARLINGTON TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION

The

MJE802

and

MJE803

are

silicon

epitaxial-base

NPN

transistors

in

monolithic

Darlington configuration and are mounted in

Jedec SOT-32 plastic package.They are intended

for use in medium power linear and switching

applications.

INTERNAL SCHEMATIC DIAGRAM

January 1997

3

2

1

SOT-32

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

80

V

VCEO

Collector-Emitter Voltage (IB = 0)

80

V

VEBO

Base-Emitter Voltage (IC = 0)

5V

IC

Collector Current

4A

IB

Base Current

0.1

A

Ptot

Total Power Dissipation at Tcase

≤ 25 oC

40

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max Operating Junction Temperature

150

oC

For PNP types voltage and current values are negative.

1/4

类似零件编号 - MJE803

制造商	部件名	数据表	功能描述
Motorola, Inc	MJE803	256Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
ON Semiconductor	MJE803	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
Fairchild Semiconductor	MJE803	51Kb / 4P	Monolithic Construction With Built-in Base- Emitter Resistors
ON Semiconductor	MJE803	84Kb / 6P	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT February, 2006 ??Rev. 8
Inchange Semiconductor ...	MJE803	99Kb / 2P	isc Silicon NPN Darlington Power Transistor

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类似说明 - MJE803

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