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M58MR064C 数据表(PDF) 1 Page - STMicroelectronics |
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M58MR064C 数据表(HTML) 1 Page - STMicroelectronics |
1 / 52 page 1/52 March 2002 M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE –VDD =VDDQ = 1.65V to 2.0V for Program, Erase and Read –VPP = 12V for fast Program (optional) s MULTIPLEXED ADDRESS/DATA s SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 100ns s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read and Write operations s PROTECTION/SECURITY – All Blocks protected at Power-up – Any combination of Blocks can be protected – 64 bit unique device identifier – 64 bit user programmable OTP cells – One parameter block permanently lockable s COMMON FLASH INTERFACE (CFI) s 100,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58MR064C: 88DCh – Bottom Device Code, M58MR064D: 88DDh FBGA TFBGA48 (ZC) 10 x 4 ball array Figure 1. Logic Diagram AI90087 6 A16-A21 W ADQ0-ADQ15 VDD M58MR064C M58MR064D E VSS 16 G RP WP VDDQ VPP L K WAIT BINV |
类似零件编号 - M58MR064C |
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类似说明 - M58MR064C |
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