M58MR016C datasheet(5/51 Pages) STMICROELECTRONICS

部件名	M58MR016C

功能描述	16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

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制造商	STMICROELECTRONICS [STMicroelectronics]

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M58MR016C, M58MR016D

SIGNAL DESCRIPTIONS

See Figure 1 and Table 1.

Address Inputs or Data Input/Output (ADQ0-

ADQ15). When Chip Enable E is at VIL and Out-

put Enable G is at VIH the multiplexed address/

data bus is used to input addresses for the memo-

ry array, data to be programmed in the memory ar-

ray or commands to be written to the C.I. The

address inputs for the memory array are latched

on the rising edge of Latch Enable L. The address

latch is transparent when L is at VIL. In synchro-

nous operations the address is also latched on the

first rising/falling edge of K (depending on clock

configuration) when L is low. Both input data and

commands are latched on the rising edge of Write

Enable W. When Chip Enable E and Output En-

able G are at VIL the address/data bus outputs

data from the Memory Array, the Electronic Signa-

ture Manufacturer or Device codes, the Block Pro-

tection status the Read Configuration Register

status, the protection register or the Status Regis-

ter. The address/data bus is high impedance when

the chip is deselected, Output Enable G is at VIH,

or RP is at VIL.

Address Inputs (A16-A19). The five MSB ad-

dresses of the memory array are latched on the

rising edge of Latch Enable L. In synchronous op-

eration these inputs are also latched on the first

rising/falling edge of K (depending on clock config-

uration) when L is low.

Chip Enable (E). The Chip Enable input acti-

vates the memory control logic, input buffers, de-

coders and sense amplifiers. E at VIH deselects

the memory and reduces the power consumption

to the standby level. E can also be used to control

writing to the command register and to the memo-

ry array, while W remains at VIL.

Output Enable (G). The Output Enable gates the

outputs through the data buffers during a read op-

eration. When G is at VIH the outputs are High im-

pedance.

Write Enable (W). This input controls writing to

the Command Register and Data latches. Data are

latched on the rising edge of W.

Write Protect (WP). This input gives an addition-

al hardware protection level against program or

erase when pulled at VIL, as described in the Block

Lock instruction description.

Reset/Power-down Input (RP). The

RP

input

provides hardware reset of the memory, and/or

Power-down functions, depending on the Read

Configuration Register status. Reset/Power-down

of the memory is achieved by pulling RP to VIL for

at least tPLPH. When the reset pulse is given, the

memory will recover from Power-down (when en-

abled) in a minimum of tPHEL, tPHLL or tPHWL (see

Table 31 and Figure 15) after the rising edge of

RP. Exit from Reset/Power-down changes the

contents of the Read Configuration Register bits

14 and 15, setting the memory in asynchronous

page mode read and power save function dis-

abled. All blocks are protected and unlocked after

a Reset/Power-down.

Latch Enable (L). L latches the address bits

ADQ0-ADQ15 and A16-A19 on its rising edge.

The address latch is transparent when L is at VIL

and it is inhibited when L is at VIH.

Clock (K). The clock input synchronizes the

memory to the micro controller during burst mode

read operation; the address is latched on a K edge

(rising or falling, according to the configuration set-

tings) when L is at VIL. K is don’t care during asyn-

chronous page mode read and in write operations.

Wait (WAIT). WAIT is an output signal used dur-

ing burst mode read, indicating whether the data

on the output bus are valid or a wait state must be

inserted. This output is high impedance when E or

G are high or RP is at VIL, and can be configured

to be active during the wait cycle or one clock cy-

cle in advance.

Bus Invert (BINV). BINV is an input/output signal

used to reduce the amount of power needed to

switch the external address/data bus. The power

saving is achieved by inverting the data output on

ADQ0-ADQ15 every time this gives an advantage

in terms of number of toggling bits. In burst mode

read, each new data output from the memory is

compared with the previous data. If the number of

transitions required on the data bus is in excess of

8, the data is inverted and the BINV signal will be

driven by the memory at VOH to inform the receiv-

ing system that data must be inverted before any

further processing. By doing so, the actual transi-

tions on the data bus will be less than 8.

In a similar way, when a command is given, BINV

may be driven by the system at VIH to inform the

memory that the data input must be inverted.

Like the other input/output pins, BINV is high im-

pedance when the chip is deselected, output en-

able G is at VIH or RP is at VIL; when used as an

input, BINV must follow the same set-up and hold

timings of the data inputs.

VDD and VDDQ Supply Voltage (1.7V to 2.0V).

VDD is the main power supply for all operations

(Read, Program and Erase). VDDQ is the supply

voltage for Input and Output.

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