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L6382D5TR 数据表(PDF) 9 Page - STMicroelectronics |
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L6382D5TR 数据表(HTML) 9 Page - STMicroelectronics |
9 / 21 page L6382D5 Electrical characteristics 9/21 Symbol Pin Parameter Test condition Min Typ Max Unit TFALL 12 Fall time Cload = 1nF 75 ns TDELAY 12 Propagation delay (LGI to LSG) high to low and low to high 300 ns RB 12 Pull down Resistor to OUT 20 K Ω High-side floating gate-driver supply ILKBOOT 11 VBOOT pin leakage current VBOOT = 580V 5µA ILKOUT 13 OUT pin leakage current VOUT = 562V 5µA RDS(on) Synchronous bootstrap diode on- resistance VLVG = HIGH 150 Ω Forward Voltage Drop at 10 mA forward current 2.4 V Forward Current at 5V forward voltage drop 20 mA VREF VREF 20 Reference voltage 15mA load. 4.9 5 5.1 V 20 Load regulation IRef = -3 to +30 mA -20 2 mV 20 Voltage change 15mA load; Vcc = 9V to 15V 15 mV 20 VREF latched protection 3.2 V 20 VREF Clamp @3mA VCC from 0 to VCCON during start-up; Vcc from VREF(OFF) to 0 during shut-down; VREF < 2V 1.2 1.8 V IREF 20 Current Drive Capability -3 +30 mA Save mode -3 +10 mA Overcurrent buffer stage VCSI 19 Comparator Level 0.52 0.54 0.56 V ICSI 19 Input Bias Current 500 nA Propagation delay CSO turn off to LSG low 200 ns Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, CDRIVER = 1nF unless otherwise specified) (continued) |
类似零件编号 - L6382D5TR |
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类似说明 - L6382D5TR |
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