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29F200 数据表(PDF) 1 Page - STMicroelectronics |
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29F200 数据表(HTML) 1 Page - STMicroelectronics |
1 / 22 page 1/22 PRELIMINARY DATA October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory s SINGLE 5V ±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME –8 µs per Byte/Word typical s 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – M29F200BT Device Code: 00D3h – M29F200BB Device Code: 00D4h 44 1 TSOP48 (N) 12 x 20mm SO44 (M) Figure 1. Logic Diagram AI02912 17 A0-A16 W DQ0-DQ14 VCC M29F200BT M29F200BB E VSS 15 G RP DQ15A–1 BYTE RB |
类似零件编号 - 29F200 |
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类似说明 - 29F200 |
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