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GS71108AJ-10 数据表(PDF) 3 Page - List of Unclassifed Manufacturers

部件名 GS71108AJ-10
功能描述  128K x 8 1Mb Asynchronous SRAM
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制造商  ETC2 [List of Unclassifed Manufacturers]
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标志 ETC2 - List of Unclassifed Manufacturers

GS71108AJ-10 数据表(HTML) 3 Page - List of Unclassifed Manufacturers

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Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
GS71108ATP/J/SJ/U
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 6/2006
3/16
© 2001, GSI Technology
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
–40
85
oC
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.


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