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SI7366DP 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI7366DP
功能描述  N-Channel 20-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI7366DP 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 72296
S-80440-Rev. C, 03-Mar-08
Vishay Siliconix
Si7366DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
0.0045
0.0055
Ω
VGS = 4.5 V, ID = 16 A
0.0072
0.009
Forward Transconductancea
gfs
VDS = 6 V, ID = 20 A
48
S
Diode Forward Voltagea
VSD
IS = 4.5 A, VGS = 0 V
0.76
1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 20 A
16
25
nC
Gate-Source Charge
Qgs
6
Gate-Drain Charge
Qgd
5.2
Gate Resistance
Rg
1.8
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
21
32
ns
Rise Time
tr
16
25
Turn-Off Delay Time
td(off)
58
90
Fall Time
tf
15
23
Source-Drain Reverse Recovery Time
trr
IF = 4.1 A, di/dt = 100 A/µs
40
80
Output Characteristics
0
10
20
30
40
50
60
012345
VGS = 10 thru 4 V
VDS - Drain-to-Source Voltage (V)
3 V
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


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