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2SJ377 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SJ377
功能描述  Relay Drive, DC/DC Converter and Motor Drive Applications
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SJ377 数据表(HTML) 2 Page - Toshiba Semiconductor

  2SJ377 Datasheet HTML 1Page - Toshiba Semiconductor 2SJ377 Datasheet HTML 2Page - Toshiba Semiconductor 2SJ377 Datasheet HTML 3Page - Toshiba Semiconductor 2SJ377 Datasheet HTML 4Page - Toshiba Semiconductor 2SJ377 Datasheet HTML 5Page - Toshiba Semiconductor 2SJ377 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SJ377
2005-03-04
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
−100
µA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −2.5 A
0.24
0.28
Drain−source ON-resistance
RDS (ON)
VGS = −10 V, ID = −2.5 A
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
2.0
4.0
S
Input capacitance
Ciss
630
Reverse transfer capacitance
Crss
95
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
290
pF
Rise time
tr
25
Turn−on time
ton
45
Fall time
tf
55
Switching time
Turn−off time
toff
200
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
22
Gate−source charge
Qgs
16
Gate−drain (“Miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
6
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
80
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / µS
0.1
µC
Marking
J377
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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