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2SJ377 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SJ377 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ377 2005-03-04 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cutoff current IDSS VDS = −60 V, VGS = 0 V — — −100 µA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −2.5 A — 0.24 0.28 Drain−source ON-resistance RDS (ON) VGS = −10 V, ID = −2.5 A — 0.16 0.19 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.0 4.0 — S Input capacitance Ciss — 630 — Reverse transfer capacitance Crss — 95 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 290 — pF Rise time tr — 25 — Turn−on time ton — 45 — Fall time tf — 55 — Switching time Turn−off time toff — 200 — ns Total gate charge (Gate−source plus gate−drain) Qg — 22 — Gate−source charge Qgs — 16 — Gate−drain (“Miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A — 6 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 80 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / µS — 0.1 — µC Marking J377 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
类似零件编号 - 2SJ377 |
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类似说明 - 2SJ377 |
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