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STP4N150 数据表(PDF) 3 Page - STMicroelectronics |
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STP4N150 数据表(HTML) 3 Page - STMicroelectronics |
3 / 16 page STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Electrical ratings 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-247 TO-220FH TO-3PF VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 44 4 (1) 4 (1) A ID Drain current (continuous) at TC = 100 °C 2.5 2.5 2.5 (1) 2.5 (1) A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 12 12 12 (1) 12 (1) A PTOT Total dissipation at TC = 25 °C 160 40 Tbd W Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 TO-247 TO-220FH TO-3PF Rthj-case Thermal resistance junction-case max 0.78 3.12 Tbd °C/W Rthj-amb Thermal resistance junction- ambient max 62.5 50 62.5 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 4A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ |
类似零件编号 - STP4N150 |
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类似说明 - STP4N150 |
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