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SI4396DY 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SI4396DY
功能描述  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI4396DY 数据表(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4396DY
New Product
Document Number: 74252
S-61223-Rev. A, 17-Jul-06
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
APPLICATIONS
Notebook Logic DC/DC
- Low Side
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
a
Qg (Typ)
30
0.0115 at VGS = 10 V
16
13.3 nC
0.016 at VGS = 4.5 V
12.7
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IS (A)
30
0.4 at 2 A
5a
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
Ordering Information :
Si4396DY-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
S
D
Schottky Diode
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
16
A
TC = 70 °C
12.7
TA = 25 °C
12.3b, c
TA = 70 °C
9.7b, c
Pulsed Drain Current
IDM
40
Continuous Source-Drain Diode Current
TC = 25 °C
IS
5
TA = 25 °C
2.8b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Single Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
5.4
W
TC = 70 °C
3.4
TA = 25 °C
3.1b, c
TA = 70 °C
2.0b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 sec
RthJA
34
40
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
23
RoHS
COMPLIANT


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