IRF1010NSPbF

IRF1010NLPbF

03/11/04

‡

S

D

G

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010NL) is available for low-

profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

ˆ

85

‡

ˆ

60

A

Pulsed Drain Current

ˆ

290

Power Dissipation

180

W

Linear Derating Factor

1.2

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



43

A

Repetitive Avalanche Energy



18

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒˆ

3.6

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

2

D Pak

TO-262

IRF1010NLPbF

www.irf.com

1

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.85

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

°C/W

Thermal Resistance

PD - 95103

IRF1010NSPbF