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RD38F203000YTQ0 数据表(PDF) 26 Page - Numonyx B.V

部件名 RD38F203000YTQ0
功能描述  Wireless Flash Memory (W18/W30 SCSP)
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制造商  NUMONYX [Numonyx B.V]
网页  http://www.numonyx.com
标志 NUMONYX - Numonyx B.V

RD38F203000YTQ0 数据表(HTML) 26 Page - Numonyx B.V

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32WQ and 64WQ Family with Asynchronous RAM
Datasheet
November 2007
26
Order Number: 251407-13
32WQ and 64WQ Family with Asynchronous RAM
W5
tAW
Address Setup to R-WE#
(P-CS#) Going High
60
60
ns
W6
tCW
P-CS# (R-WE#) Setup to R-WE# (P-CS#)
Going High
60
60
ns
W7
tDH
Data Hold from R-WE#
(P-CS#) High
0–
0
ns
W8
tWR
Write Recovery
0
0
ns
5
W9
tBW
R-UB#, R-LB# Setup to R-WE# (P-CS#) Going
High
60
60
ns
tCEL
P-CE# low-time restriction
8,000
ns
7,8
W10
tWPH
Write High Pulse Width
10
ns
8
Notes:
1.
See
Figure 9, “AC Waveform PSRAM Write Operation” .
2.
A write occurs during the overlap (tWP) of low P-CS# and low R-WE#. A write begins when P-CS# goes low and R-WE#
goes low with asserting R-UB# or R-LB# for single byte operation or simultaneously asserting R-UB# and R-LB# for
double byte operation. A write ends at the earliest transition when P-CS# goes high and R-WE# goes high.
3.
tWP is measured from P-CS# going low to end of a write.
4.
tAS is measured from the address valid to the beginning of a write.
5.
tWR is measured from the end of a write to the address change. tWR applied in case a write ends as P-CS# or R-WE#
going high.
6.
W3 is 70 ns for continuous write operations over 50 times.
7.
P-CE# must go high and be maintained high for a minimum of 10ns at least once every 8,000ns
8.
Spec’s only applicable to parts 38F1030W0YxQF & 38F2030W0YxQF
9.
Applicable to 38F2020W0ZTQ1, 38F2020W0ZBQ1, 38F2030W0YTQ1, 38F2030W0YBQ1, 38F2030W0ZTQ2,
38F2030W0ZBQ2, 38F1030W0ZTQ0, 38F1030W0ZBQ0.
Table 13: PSRAM AC Characteristics—Write (Sheet 2 of 2)
#Symbol1
Parameter7
1.8 V
3.0 V
Unit
Notes
Min
Max
Min
Max
Figure 9: AC Waveform PSRAM Write Operation
Data In
W7
W4
W8
W5
W3
W3
W9
W6
W1
W2
W1
ADDRESSES
P-CS#
R-UB#, R-LB#
R-WE#
DATA


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