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M4Z28-BR00SH 数据表(PDF) 11 Page - STMicroelectronics |
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M4Z28-BR00SH 数据表(HTML) 11 Page - STMicroelectronics |
11 / 25 page M40SZ100Y, M40SZ100W Operation 11/25 Figure 7. Power up timing Table 2. Power down/up AC characteristics Symbol Parameter(1) 1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted). Min Max Unit tF (2) 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). VPFD (max) to VPFD (min) VCC fall time 300 µs tFB (3) 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. VPFD (min) to VSS VCC fall time 10 µs tPFD PFI to PFO propagation delay 15 25 µs tR VPFD(min) to VPFD (max) VCC rise time 10 µs tEPD Chip enable propagation delay (low or high) M40SZ100Y 10 ns M40SZ100W 15 ns tRB VSS to VPFD (min) VCC rise time 1 µs tCER Chip enable recovery 40 120 ms tREC VPFD (max) to RST high 40 200 ms tWPT Write protect time 40 200 µs AI03937 VCC E ECON tR tCER VOHB VPFD (max) VPFD (min) VSO VPFD tEPD tEPD RST tREC tRB VALID PFO |
类似零件编号 - M4Z28-BR00SH |
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类似说明 - M4Z28-BR00SH |
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