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IS42S16400 数据表(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS42S16400 数据表(HTML) 4 Page - Integrated Silicon Solution, Inc |
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4 / 55 page  4 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 01/30/08 IS42S16400 FUNCTION (InDetail) A0-A11areaddressinputssampledduringtheACTIVE (row-address A0-A11)andREAD/WRITEcommand(A0-A7 withA10definingautoPRECHARGE). A10 is sampled during aPRECHARGEcommandtodetermineifallbanksareto bePRECHARGED(A10 HIGH)orbankselectedbyBA0, BA1(LOW).Theaddressinputsalsoprovidetheop-code duringaLOADMODEREGISTERcommand. BankSelectAddress(BA0andBA1) defines which bank theACTIVE,READ,WRITEorPRECHARGEcommand is being applied. CAS , in conjunction with the RAS and WE, forms the device command.Seethe“CommandTruthTable”fordetailson device commands. TheCKEinputdetermineswhethertheCLKinputisen- abled.ThenextrisingedgeoftheCLKsignalwillbevalid whenisCKEHIGHandinvalidwhenLOW.WhenCKEis LOW,thedevicewillbeineitherpower-downmode,CLOCK SUSPENDmode,orSELF-REFRESHmode.CKEisan asynchronous input. CLKisthemasterclockinputforthisdevice.Exceptfor CKE,allinputstothisdeviceareacquiredinsynchroniza- tion with the rising edge of this pin. TheCS input determines whether command input is en- abled within the device. Command input is enabled when CS isLOW,anddisabledwithCS isHIGH.Thedevice remains in the previous state when CS isHIGH.DQ0to DQ15areDQpins.DQthroughthesepinscanbecontrolled inbyteunitsusingtheLDQMandUDQMpins. LDQMandUDQMcontrolthelowerandupperbytesof theDQbuffers.Inreadmode,LDQMandUDQMcontrol the output buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and when HIGH, disabled.TheoutputsgototheHIGHImpedanceState whenLDQM/UDQMisHIGH.Thisfunctioncorresponds to OE inconventionalDRAMs.Inwritemode,LDQMand UDQMcontroltheinputbuffer.WhenLDQMorUDQMis LOW,thecorrespondingbufferbyteisenabled,anddata canbewrittentothedevice.WhenLDQMorUDQMis HIGH, input data is masked and cannot be written to the device. RAS , in conjunction with CAS and WE , forms the device command.Seethe“CommandTruthTable”itemfordetails on device commands. WE , in conjunction with RAS and CAS , forms the device command.Seethe“CommandTruthTable”itemfordetails on device commands. VDDq is the output buffer power supply. VDD is the device internal power supply. GNDq is the output buffer ground. GNDisthedeviceinternalground. READ TheREADcommandselectsthebankfromBA0,BA1inputs and starts a burst read access to an active row. Inputs A0-A7 provides the starting column location. When A10 is HIGH,thiscommandfunctionsasanAUTOPRECHARGE command. When the auto precharge is selected, the row beingaccessedwillbeprechargedattheendoftheREAD burst.Therowwillremainopenforsubsequentaccesses when AUTO PRECHARGE is not selected.DQ’s read dataissubjecttothelogiclevelontheDQMinputstwo clocksearlier.WhenagivenDQMsignalwasregistered HIGH,thecorrespondingDQ’swillbeHigh-Ztwoclocks later.DQ’swillprovidevaliddatawhentheDQMsignal wasregisteredLOW. WRITE A burst write access to an active row is initiated with the WRITE command.BA0, BA1 inputs selects the bank, and the starting column location is provided by inputs A0-A7.Whether or not AUTO-PRECHARGE is used is determined by A10. Therowbeingaccessedwillbeprechargedattheendof theWRITEburst,ifAUTOPRECHARGEisselected.If AUTOPRECHARGEisnotselected,therowwillremain open for subsequent accesses. A memory array is written with corresponding input data onDQ’sandDQMinputlogiclevelappearingatthesame time.DatawillbewrittentomemorywhenDQMsignalis LOW.WhenDQMisHIGH,thecorrespondingdatainputs willbeignored,andaWRITEwillnotbeexecutedtothat byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. BA0,BA1canbeusedtoselectwhichbankisprecharged or they are treated as “Don’t Care”.A10 determined whether one or all banks are precharged. After execut- ing this command, the next command for the selected banks(s) is executed after passage of the period t RP, which istheperiodrequiredforbankprecharging.Onceabank has been precharged, it is in the idle state and must be activatedpriortoanyREADorWRITEcommandsbeing issued to that bank. AUTO PRECHARGE TheAUTOPRECHARGEfunctionensuresthatthepre- charge is initiated at the earliest valid stage within a burst. Thisfunctionallowsforindividual-bankprechargewithout requiringanexplicitcommand.A10toenablestheAUTO PRECHARGEfunctioninconjunctionwithaspecificREAD orWRITEcommand.ForeachindividualREADorWRITE command, auto precharge is either enabled or disabled. |
类似零件编号 - IS42S16400_08 |
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类似说明 - IS42S16400_08 |
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