07/23/07

IRF7341QPbF

www.irf.com

1

Specifically designed for Automotive applications, these

HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET’s are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits com-

bine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety

of other applications.

The 175°C rating for the SO-8 package provides improved

thermal performance with increased safe operating area and

dual MOSFET die capability make it ideal in a variety of

power applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also available in

Tape & Reel.

Description

SO-8

55V

5.1A

4.42A

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Typical Applications

Benefits

Absolute Maximum Ratings

Parameter

Max.

Units

Drain-Source Voltage

55

V

5.1

4.2

A

Pulsed Drain Current



42

Maximum Power Dissipation

ƒ

2.4

W

Maximum Power Dissipation

ƒ

1.7

W

Linear Derating Factor

16

mW/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

140

mJ

Avalanche Current



5.1

A

Repetitive Avalanche Energy

See Fig. 14, 15, 16

mJ

Junction and Storage Temperature Range

-55 to + 175

°C

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

62.5

°C/W

PD - 96108