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STD4NK50ZD-1 数据表(PDF) 3 Page - STMicroelectronics

部件名 STD4NK50ZD-1
功能描述  N-channel 500V - 2.4廓 - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD4NK50ZD-1 数据表(HTML) 3 Page - STMicroelectronics

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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 IPAK/DPAK TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VDGR
Drain-gate voltage (RGS = 20KΩ)
500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
3
3 (1)
3 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC=100°C
1.9
1.9 (1)
1.9 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
12
12 (1)
12 (1)
A
PTOT
Total dissipation at TC = 25°C
45
20
W
Derating factor
0.36
0.16
W/°C
VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
2800
V
dv/dt(3)
3.
ISD ≤3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (DC)
--
--
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
TO-220
IPAK/DPAK
TO-220FP
Rthj-case
Thermal resistance junction-case Max
2.78
6.25
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
100
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
3A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
120
mJ


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