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STGB18N40LZ-1 数据表(PDF) 4 Page - STMicroelectronics |
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STGB18N40LZ-1 数据表(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STGD18N40LZ - STGB18N40LZ 4/18 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VCES(clamped) Collector emitter clamped voltage (VGE = 0) IC = 2 mA, RG = 1 kΩ TC = - 40 °C to 150 °C 370 400 430 V V(BR)ECS Emitter collector break-down voltage (VGE = 0) IC = 75 mA 20 28 V VGE(clamped) Gate emitter clamped voltage IG = ±2 mA 12 16 V ICES Collector cut-off current (VGE = 0) VCE = 15 V, TC = 150 °C 10 µA VCE = 200 V,TC = 150 °C 100 µA IGES Gate cut-off current (VCE = 0) VGE = ±10 V 450 625 830 µA RGE Gate emitter resistance 12 16 22 K Ω RG Gate resistance 1.6 K Ω VGE(th) Gate threshold voltage VCE = 12 V, IC = 1 mA,TC = -40 °C 1.4 V VCE = 12 V, IC = 1 mA 1.2 1.6 2.3 V VCE = 12 V, IC = 1 mA, TC =150 °C 0.7 V VGEP Gate emitter plateau voltage VCE = 12 V, IC = 10 A 2.9 V VCE(sat) Collector emitter saturation voltage VGE = 4.5 V, IC = 10 A 1.35 1.7 V VGE = 4.5 V, IC = 10 A, TC = 150 °C 1.30 V VGE = 3.8 V, IC = 6 A 1.30 V |
类似零件编号 - STGB18N40LZ-1 |
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类似说明 - STGB18N40LZ-1 |
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