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STGB18N40LZ 数据表(PDF) 3 Page - STMicroelectronics |
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STGB18N40LZ 数据表(HTML) 3 Page - STMicroelectronics |
3 / 18 page STGD18N40LZ - STGB18N40LZ Electrical ratings 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit DPAK IPAK D²PAK I²PAK VCES Collector-emitter voltage (vGE = 0) VCES(clamped) V VECS Emitter collector voltage (VGE = 0) 20 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at TC = 100 °C 25 30 A ICP (2) 2. Pulse width limited by max. junction temperature allowed Pulsed collector current 40 A VGE Gate-emitter voltage VGE(clamped) V PTOT Total dissipation at TC = 25 °C 125 150 W EAS Single pulse energy TC= 25 °C, L = 3 mH, RG = 1 KΩ 300 mJ EAS Single pulse energy TC=150 °C, L = 3 mH, RG = 1 KΩ 180 mJ ESD Human body model, R= 1550 Ω, C = 100 pF 8 kV Machine model, R = 0, C = 100 pF 800 V Charged device model 2 kV Tstg Storage temperature – 55 to 175 °C Tj Operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Unit DPAK IPAK D²PAK I²PAK Rthj-case Thermal resistance junction-case max 1.2 1 °C/W Rthj-amb Thermal resistance junction-ambient max 65 62.5 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
类似零件编号 - STGB18N40LZ |
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类似说明 - STGB18N40LZ |
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