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SB180 数据表(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SB180 数据表(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability MECHANICAL DATA ◇ Case:JEDEC DO--41,molded plastic ◇ Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 ◇ Polarity: Color band denotes cathode ◇ Weight: 0.012 ounces,0.34 grams ◇ Mounting position: Any Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SB 130 SB 140 SB 150 SB 160 SB 170 SB 180 SB 190 SB 1A0 UNITS Maximum recurrent peak reverse voltage VRRM 30 40 50 60 70 80 90 100 V Maximum RMS voltage VRMS 21 28 35 42 49 56 63 70 V Maximum DC blocking voltage VDC 30 40 50 60 70 80 90 100 V Maximum average forward rectified current 9.5mm lead length, (see fig.1) Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125℃ Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) RθJA ℃/W Operating junction temperature range TJ ℃ Storage temperature range TSTG ℃ NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermalresistance junction to ambient BL GALAXY ELECTRICAL SB120---SB1A0 50 - 55 --- + 150 - 55 --- + 150 www.galaxycn.com 0.85 0.5 5.0 110 80 A ◇ For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications IF(AV) SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A DO - 41 ◇ The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IFSM A Maximum instantaneous forward voltage @ 1.0A VF mA IR V 0.5 0.7 10.0 - 55 --- + 125 SB 120 20 14 20 1.0 40.0 Document Number 0266004 1. BLGALAXY ELECTRICAL |
类似零件编号 - SB180 |
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类似说明 - SB180 |
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