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BYM36E 数据表(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BYM36E 数据表(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol nn and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--27,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces ,1.15 gram s Mounting pos ition: Any Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYM 36D BYM 36E BYM 36F BYM 36G UNITS Maximum recurrent peak reverse voltage VRRM 800 1000 1200 1400 V Maximum RMS voltage VRMS 560 700 840 980 V Maximum DC blocking voltage VDC 800 1000 1200 1400 V Maximum average f orw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ 3.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured with I F=0. 5A, I R=1A, I rr=0. 25A. www.galaxycn.com 3. Thermal resistance f rom junction to am bient. GALAXY ELECTRICAL A A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 5.0 100.0 250 IF(AV) 1.57 A IFSM IR -55 ---- + 150 -55 ---- + 150 150 22 32 200 100 BYM36A(Z)---BYM36G(Z) DO - 27 200 200 140 200.0 600 BYM 36A 600 420 BYM 36B 3.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 400 280 VOLTAGE RANGE: 200 --- 1400 V CURRENT: 3.0 A FAST RECOVERY RECT IFIERS BYM 36C BL BLGALAXY ELECTRICAL Document Number 0261041 1. |
类似零件编号 - BYM36E |
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类似说明 - BYM36E |
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