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2SC2715 数据表(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2715 数据表(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2715 Document number: BL/SSSTC099 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA DC current gain hFE VCE=12V,IC=2mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA B 0.4 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA B 1 V Transition frequency fT VCE=10V, IC= 1mA 100 400 MHz CLASSIFICATION OF hFE(1) Rank R O Y Range 40-80 70-140 120-240 Marking RR1 RO1 RY1 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
类似零件编号 - 2SC2715 |
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类似说明 - 2SC2715 |
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