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IRF640S 数据表(PDF) 3 Page - STMicroelectronics |
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IRF640S 数据表(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =100 V ID =9 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 3) 13 27 17 35 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 160 V ID =18 A VGS = 10V 55 10 21 72 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =160 V ID =18 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 21 25 50 27 32 65 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 18 72 A A VSD ( ∗)Forward On Voltage ISD =18 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A di/dt = 100 A/ µs VDD =50 V Tj = 150 oC (see t est circuit, f igure 5) 240 1.8 15 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance IRF640S 3/8 |
类似零件编号 - IRF640S |
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类似说明 - IRF640S |
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