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HCF40161BM1 数据表(PDF) 6 Page - STMicroelectronics |
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HCF40161BM1 数据表(HTML) 6 Page - STMicroelectronics |
6 / 15 page DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25 oC, CL =50 pF, RL = 200 K Ω, typical temperature coefficent for all VDD values is 03 %/ oC, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions Value Unit VDD (V) Min. Typ. Max. tPLH tPHL Propagation Delay Time Clock to Q 5 200 400 ns 10 80 160 15 60 120 tPLH tPHL Propagation Delay Time Clock to COUT 5 225 450 ns 10 95 190 15 70 140 tPLH tPHL Propagation Delay Time TE to COUT 5 125 250 ns 10 55 110 15 40 80 tsetup Setup Time Data to Clock 5 240 120 ns 10 90 45 15 60 30 tsetup Setup Time Load to Clock 5 240 120 ns 10 90 45 15 60 30 tsetup Setup Time PE or TE to Clock 5 340 170 ns 10 140 70 15 100 50 thold Hold Time 5 0 ns 10 0 15 0 tTHL tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 tW CLock Input Pulse Width 5 170 85 ns 10 70 35 15 50 25 fCL Maximum Clock Input Frequency 5 2 3 MHz 10 5.5 8.5 15 8 12 tr tf Clock Input Rise or Fall Time * 200 ns 70 15 tPHL Propagation Delay Time (40160B, 40161B) Clear to Q 5 250 500 ns 10 110 220 15 80 160 tsetup Setup Time (40162B, 40163B) Clear to Clock 5 340 170 ns 10 140 70 15 100 50 thold Hold Time (40162B, 40163B) Clear to Clock 50 ns 10 0 15 0 trem Clear Removal Time (40162B, 40163B) 5 200 100 ns 10 100 50 15 70 35 tW Clear Input Pulse Width Low Level (40160B, 40161B) 5 170 85 ns 10 70 35 15 50 25 * If more than one unit is cascated in the parallel clocked application, tr should be made less than or equal to the sum of the fixed propagation delay at 50 pF and the transition time of the carry output driving stage for the estimated capacitance HCC/HCF40160B-40161B-40162-40163 6/15 |
类似零件编号 - HCF40161BM1 |
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类似说明 - HCF40161BM1 |
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