BTA202X-800D datasheet(2/12 Pages) NXP

部件名	BTA202X-800D

功能描述	2 A Three-quadrant triacs high commutation

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制造商	NXP [NXP Semiconductors]

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BTA202X_SER_D_E_1

Product data sheet

Rev. 01 — 7 February 2008

2 of 12

NXP Semiconductors

BTA202X series D and E

2 A Three-quadrant triacs high commutation

2.

Pinning information

3.

Ordering information

4.

Limiting values

Table 1.

Pinning

Description

Simpliﬁed outline

Graphic symbol

1

main terminal 1 (T1)

SOT186A (TO-220F)

2

main terminal 2 (T2)

3

gate (G)

mb

mounting base (isolated)

3

2

1

mb

sym051

T1

G

T2

Table 2.

Ordering information

Type number

Package

Name

Description

Version

BTA202X-600D

TO-220F

plastic single-ended package; isolated heatsink mounted; 1 mounting hole;

3-lead TO-220 ‘full pack’

SOT186A

BTA202X-600E

BTA202X-800D

BTA202X-800E

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

BTA202X-600D; BTA202X-600E

[1] -

600

V

BTA202X-800D; BTA202X-800E

800

V

IT(RMS)

RMS on-state current

full sine wave; Th ≤ 110 °C; see

Figure 4 and 5

-2

A

ITSM

non-repetitive peak on-state current

full sine wave; Tj =25 °C prior to

surge; see Figure 2 and 3

t = 20 ms

-

14

A

t = 16.7 ms

-

15.4

A

I2tI2t for fusing

tp = 10 ms

-

0.98

A2s

dIT/dt

rate of rise of on-state current

ITM = 1.5 A; IG = 0.2 A;

dIG/dt = 0.2 A/µs

-

100

A/

µs

IGM

peak gate current

-

2

A

PGM

peak gate power

-

5

W

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