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STB13NM50N-1 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB13NM50N-1
功能描述  N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB13NM50N-1 数据表(HTML) 3 Page - STMicroelectronics

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STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/TO-247
D²PAK/I²PAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
12
12 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
6
6 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
48
48 (1)
A
PTOT
Total dissipation at TC = 25°C
100
25
W
dv/dt (3)
3.
ISD ≤12A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220/TO-247
D²PAK/I²PAK
TO-220FP
Rthj-case
Thermal resistance junction-case max
1.25
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
200
mJ


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