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BTA10 数据表(PDF) 1 Page - STMicroelectronics |
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BTA10 数据表(HTML) 1 Page - STMicroelectronics |
1 / 4 page BTA10 GP March 1995 TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) Tc = 90 °C10 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) tp = 8.3 ms 126 A tp = 10 ms 120 I2tI2t value tp = 10 ms 72 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/ µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G . LOW IH = 13mA max . HIGH SURGE CURRENT : ITSM = 120A . IGT SPECIFIED IN FOUR QUADRANTS . INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA10- Unit 400 GP 600 GP VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA10 GP’s use high performance, glass pas- sivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications. 1/4 |
类似零件编号 - BTA10 |
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类似说明 - BTA10 |
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