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BD244B 数据表(PDF) 2 Page - STMicroelectronics |
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BD244B 数据表(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-ca se Rthj- amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.92 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collector Cut -of f Current (VBE =0) VCE =rated VCEO 0.4 mA ICEO Collector Cut -of f Current (IB =0) VCE =60 V 0.7 mA IEBO Emitt er Cut -of f Current (IC =0) VEB =5 V 1 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC =30 mA for BD243B/BD244B for BD243C/BD244C 80 100 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC =6 A IB =1 A 1.5 V VBE ∗ Base-Emitt er Voltage IC =6 A VCE =4 V 2 V hFE ∗ DC Current Gain IC =0.3 A VCE =4 V IC =3 A VCE =4 V 30 15 hfe Small Signal Current Gain IC =0. 5 A VCE =10 V f = 1MHz IC =0. 5 A VCE =10 V f = 1KHz 3 20 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2% For PNP types voltage and current values are negative. Safe Operating Area BD243B / BD243C / BD244B / BD244C 2/4 |
类似零件编号 - BD244B |
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类似说明 - BD244B |
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