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1N6295A 数据表(PDF) 3 Page - DAESAN ELECTRONIC CORP. |
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1N6295A 数据表(HTML) 3 Page - DAESAN ELECTRONIC CORP. |
3 / 6 page ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified) Breakdown Voltage Maximum Maximum Maximum Maximum General V(BR) at IT(1) Test Stand-off Reverse Peak Pulse Clamping Temp. JEDEC Semiconductor (V) Current Voltage Leakage Current Voltage Coefficient Type Part IT VWM at VWM IPPM(2) at IPPM of V(BR) Number Number Min Max (mA) (V) ID(4) (µA) (A) VC (V) (% /¡ C) 1N6292(C )A 1.5K E 75(C )A 71.3 78.8 1.0 64.1 1.0 14.6 104 0.105 1N6293(C ) 1.5K E 82(C ) 73.8 90.2 1.0 66.4 1.0 12.7 118 0.105 1N6293(C )A 1.5K E 82(C )A 77.9 86.1 1.0 70.1 1.0 13.3 113 0.105 1N6294(C ) 1.5K E 91(C ) 81.9 100.0 1.0 73.7 1.0 11.5 131 0.106 1N6294(C )A 1.5K E 91(C )A 86.5 95.5 1.0 77.8 1.0 12.0 125 0.106 1N6295(C ) 1.5K E 100(C ) 90.0 110 1.0 81.0 1.0 10.4 144 0.106 1N6295(C )A 1.5K E 100(C )A 95.0 105 1.0 85.5 1.0 10.9 137 0.106 1N6296(C ) 1.5K E 110(C ) 99.0 121 1.0 89.2 1.0 9.5 158 0.107 1N6296(C )A 1.5K E 110(C )A 105 116 1.0 94.0 1.0 9.9 152 0.107 1N6297(C ) 1.5K E 120(C ) 108 132 1.0 97.2 1.0 8.7 173 0.107 1N6297(C )A 1.5K E 120(C )A 114 126 1.0 102 1.0 9.1 165 0.107 1N6298(C ) 1.5K E 130(C ) 117 143 1.0 105 1.0 8.0 187 0.107 1N6298(C )A 1.5K E 130(C )A 124 137 1.0 111 1.0 8.4 179 0.107 1N6299(C ) 1.5K E 150(C ) 136 165 1.0 121 1.0 7.0 215 0.108 1N6299(C )A 1.5K E 150(C )A 143 158 1.0 128 1.0 7.2 207 0.106 1N6300(C ) 1.5K E 160(C ) 144 176 1.0 130 1.0 6.5 230 0.106 1N6300(C )A 1.5K E 160(C )A 152 168 1.0 136 1.0 6.8 219 0.108 1N6301(C ) 1.5K E 170(C ) 153 187 1.0 138 1.0 6.1 244 0.108 1N6301(C )A 1.5K E 170(C )A 162 179 1.0 145 1.0 6.4 234 0.108 1N6302(C ) 1.5K E 180(C ) 162 198 1.0 146 1.0 5.8 258 0.108 1N6302(C )A 1.5K E 180(C )A 171 189 1.0 154 1.0 6.1 246 0.108 1N6303(C ) 1.5K E 200(C ) 180 220 1.0 162 1.0 5.2 287 0.108 1N6303(C )A 1.5K E 200(C )A 190 210 1.0 171 1.0 5.5 274 0.108 1.5K E 220(C ) 198 242 1.0 175 1.0 4.4 344 0.108 1.5K E 220(C )A 209 231 1.0 185 1.0 4.6 328 0.108 1.5K E 250(C ) 225 275 1.0 202 1.0 4.2 360 0.110 1.5K E 250(C )A 237 263 1.0 214 1.0 4.4 344 0.110 1.5K E 300(C ) 270 330 1.0 243 1.0 3.5 430 0.110 1.5K E 300(C )A 285 315 1.0 256 1.0 3.6 414 0.110 1.5K E 350(C ) 315 385 1.0 284 1.0 3.0 504 0.110 1.5K E 350(C )A 333 368 1.0 300 1.0 3.1 482 0.110 1.5K E 400(C ) 360 440 1.0 324 1.0 2.6 574 0.110 1.5K E 400(C )A 380 420 1.0 342 1.0 2.7 548 0.110 1.5K E 440(C ) 396 484 1.0 356 1.0 2.4 631 0.110 1.5K E 440(C )A 418 462 1.0 376 1.0 2.5 602 0.110 Notes : (1) P ulse test: tp = 50ms (2) S urge current waveform per F ig. 3 and derate per F ig. 2 (3) All terms and symbols are consistent with ANS I/IE E E C A62.35 (4) For bidirectional types with V R 10 volts and less the ID limit is doubled A pplication ¥T his series of S ilicon Transient S uppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components. ¥T he T V S diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: R .E .A. specification P.E . 60). ¥T his Transient Voltage S uppressor diode has a pulse power rating of 1500 watts for one millisecond. T he response time of T V S diode clamping action is effectively instantaneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semi- conductors and components. T V S diodes can also be used in series or parallel to increase the peak power ratings. |
类似零件编号 - 1N6295A |
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类似说明 - 1N6295A |
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