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HCF4014BM1 数据表(PDF) 5 Page - STMicroelectronics |
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HCF4014BM1 数据表(HTML) 5 Page - STMicroelectronics |
5 / 10 page HCF4014B 5/10 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ,tr =tf =20ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. (1) If more than one unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay of the output of the driving stage of the estimated capacitive load. Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. CLOCKED OPERATION tPLH tPHL Propagation Delay Time 5 160 320 ns 10 80 160 15 60 120 tTHL tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 fCL (1) Maximum Clock Input Frequency 53 6 MHz 10 6 12 15 8.5 17 tW Clock Pulse Width 5 180 90 ns 10 80 40 15 50 25 tr ,tf Clock Input Rise or Fall Time 515 µs 10 15 15 15 tsetup Setup Time, serial Input (ref to CL) 5 120 60 ns 10 80 40 15 60 30 tsetup Setup Time, Parallel Inputs (ref to CL) 580 40 ns 10 50 25 15 40 20 tsetup Setup Time, Parallel/Serial Control (ref to CL) 5 180 90 ns 10 80 40 15 60 30 thold Hold Time, serial in, parallel in, parallel /serial control 50 ns 10 0 15 0 |
类似零件编号 - HCF4014BM1 |
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类似说明 - HCF4014BM1 |
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