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TS13005CI 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS13005CI 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TS13005 High Voltage NPN Transistor 2/6 Version: B07 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =0.1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- -- 250 uA Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 9V, IC =0 IEBO -- -- 1 mA Collector-Emitter Saturation Voltage IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- -- -- -- 0.5 0.6 1 V Base-Emitter Saturation Voltage IC=1A, IB =0.2A IC=2A, IB =0.5A VBE(SAT)1 VBE(SAT)2 -- -- -- -- 1.2 1.6 V DC Current Gain VCE =5V, IC = 1A VCE =5V, IC = 2A hFE 15 8 -- -- 32 40 Dynamic Frequency VCE =10V, IC =0.5A fT 4 -- -- MHz Output Capacitance VCB =10V, f =0.1MHz Cob -- 65 -- pF Resistive Load Turn On Time tON -- 0.3 0.7 uS Storage Time tSTG -- 2.2 3 uS Fall Time VCC =125V, IC =2A, IB1 =IB2=0.4A, tP =25uS Duty Cycle ≤1% tf -- 0.3 0.5 uS Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2% |
类似零件编号 - TS13005CI |
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类似说明 - TS13005CI |
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